Samsung MZ-V9S4T0

Samsung MZ-V9S4T0. SSD capacity: 4 TB, SSD form factor: M.2, Read speed: 7250 MB/s, Write speed: 6300 MB/s, Component for: PC
Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.
Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.
Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.
Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.
Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.
Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.
Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.
Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.

Features

NVMe version: 2.0
Security algorithms: 256-bit AES
SSD capacity: 4 TB
SSD form factor: M.2
Interface: PCI Express 4.0
NVMe: Yes
Memory type: V-NAND TLC
Component for: PC
Hardware encryption: Yes
M.2 SSD size: 2280 (22 x 80 mm)
Read speed: 7250 MB/s
Write speed: 6300 MB/s
Random read (4KB): 1050000 IOPS
Random write (4KB): 1400000 IOPS
DevSlp (device sleep) support: Yes
S.M.A.R.T. support: Yes
TRIM support: Yes
Mean time between failures (MTBF): 1500000 h

Power

Operating voltage: 3.3 V
Power consumption (read): 5.5 W
Power consumption (write): 4.8 W
Power consumption (idle): 0.06 W
Power consumption DevSlp (device sleep): 5 mW

Weight dimensions

Width: 80.2 mm
Depth: 2.38 mm
Height: 80.2 mm
Weight: 9 g

Packaging data

Package width: 148 mm
Package depth: 100 mm
Package height: 22 mm
Package weight: 70 g

Operational conditions

Operating temperature (T-T): 0 - 70 °C
Operating shock: 1500 G